Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography

Citation
Ta. Savas et al., Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography, J APPL PHYS, 85(8), 1999, pp. 6160-6162
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2B
Pages
6160 - 6162
Database
ISI
SICI code
0021-8979(19990415)85:8<6160:POLNAW>2.0.ZU;2-V
Abstract
A method is presented for the fabrication of large-area arrays of magnetic particles with 100 nm period, using achromatic interferometric lithography combined with etching, electrodeposition, or an evaporation and liftoff pro cesses. These "nanomagnet'' arrays have applications in patterned magnetic media, in magnetic memories, and for studies of particle interactions. (C) 1999 American Institute of Physics. [S0021-8979(99)69208-8].