Drastic change of giant magnetoresistance of Co/Cu multilayer by decreasing residual impurities in sputtering atmosphere

Citation
S. Miura et al., Drastic change of giant magnetoresistance of Co/Cu multilayer by decreasing residual impurities in sputtering atmosphere, J APPL PHYS, 85(8), 1999, pp. 4463-4465
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2A
Pages
4463 - 4465
Database
ISI
SICI code
0021-8979(19990415)85:8<4463:DCOGMO>2.0.ZU;2-Z
Abstract
In order to clarify the influence of residual impurities in the sputtering atmosphere on the microstructure and the giant magnetoresistance (GMR), Co/ Cu multilayers were fabricated by changing the chamber pressures, P-b, just before introducing processing gas. P-b was controlled by changing the pump ing time after venting the chamber with air. A drastic change of magneto re sistance (MR) ratio from 48% to 14% was observed, when P-b was changed slig htly from 7 x 10(-8) to 3 x 10(-8) Torr. In that P-b region, the root mean square (rms) roughness increased discontinuously from 3.7 to 4.6 Angstrom a s P-b was lowered. The abrupt drop of the MR ratio was accounted for by the decrease of the antiferromagnetic coupling accompanied by the increase of interfacial roughness. (C) 1999 American Institute of Physics. [S0021-8979( 99)73608-X].