S. Miura et al., Drastic change of giant magnetoresistance of Co/Cu multilayer by decreasing residual impurities in sputtering atmosphere, J APPL PHYS, 85(8), 1999, pp. 4463-4465
In order to clarify the influence of residual impurities in the sputtering
atmosphere on the microstructure and the giant magnetoresistance (GMR), Co/
Cu multilayers were fabricated by changing the chamber pressures, P-b, just
before introducing processing gas. P-b was controlled by changing the pump
ing time after venting the chamber with air. A drastic change of magneto re
sistance (MR) ratio from 48% to 14% was observed, when P-b was changed slig
htly from 7 x 10(-8) to 3 x 10(-8) Torr. In that P-b region, the root mean
square (rms) roughness increased discontinuously from 3.7 to 4.6 Angstrom a
s P-b was lowered. The abrupt drop of the MR ratio was accounted for by the
decrease of the antiferromagnetic coupling accompanied by the increase of
interfacial roughness. (C) 1999 American Institute of Physics. [S0021-8979(
99)73608-X].