Electrical resistivity of UNi2Si2 in magnetic fields

Citation
A. Syshchenko et al., Electrical resistivity of UNi2Si2 in magnetic fields, J APPL PHYS, 85(8), 1999, pp. 4554-4555
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2A
Pages
4554 - 4555
Database
ISI
SICI code
0021-8979(19990415)85:8<4554:EROUIM>2.0.ZU;2-W
Abstract
We report on electrical resistivity measurements for an UNi2Si2 single crys tal in the temperature range 4.2-140 K and magnetic fields up to 8.4 T para llel to the c axis. The anomalies in the temperature and field dependencies of the resistivity are associated with magnetic phase transitions and allo w one to complete the B-T magnetic phase diagram. The relationship between the electrical resistivity and the periodicity of particular magnetic phase s is discussed in light of magnetoresistance behavior in other antiferromag netic U compounds. (C) 1999 American Institute of Physics. [S0021-8979(99)3 4908-2].