FeTaN films with ultrafine grain structure

FeTaN films with moderate B-s of 14 kG and high resistivity of 100-150 mu O mega cm have been investigated. Even with a low Ta incorporation of only 3 at. %, films with the above characteristics were obtained by using rf diode and dc magnetron sputtering. When the soft magnetic properties were optimi zed, only a body-centered-cubic alpha-Fe phase was found, and it had a sign ificantly expanded crystal lattice. The films exhibited a nearly amorphous grain structure. It was found that low atomic mobility of the sputtered ato ms was needed in order to promote formation of this phase. (C) 1999 America n Institute of Physics. [S0021-8979(99)37208-X].