Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

Authors
Fontcuberta, J Bibes, M Martinez, B Trtik, V Ferrater, C Sanchez, F Varela, M
Citation
J. Fontcuberta et al., Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films, J APPL PHYS, 85(8), 1999, pp. 4800-4802
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2A
Pages
4800 - 4802
Database
ISI
SICI code
0021-8979(19990415)85:8<4800:TEGOML>2.0.ZU;2-N
Abstract
We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostru cture allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of th e normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. (C) 1999 Amer ican Institute of Physics. [S0021-8979(99)35108-2].