M. Tsunoda et al., Enhanced exchange anisotropy of Ni-Fe/Mn-Ni bilayers fabricated under the extremely clean sputtering process, J APPL PHYS, 85(8), 1999, pp. 4919-4921
In order to clarify the influence of the impurities in the sputtering atmos
phere on the exchange anisotropy of ferromagnet/antiferromagnet bilayers, N
i-Fe/Mn-Ni films were prepared under different purities of the sputtering a
tmosphere by changing the base pressure from 10(-11) Torr [extremely clean
(XC) process] to 10(-7) Torr [lower grade (LG) process]. The correlation be
tween the exchange anisotropy and the microstructure of the films is discus
sed. As a result, we found that: (1) The exchange anisotropy was enhanced i
n the XC processed films comparing to the LG processed ones, especially whe
n the thicknesses of both the ferromagnetic and antiferromagnetic layers we
re very thin. (2) The critical thicknesses of the antiferromagnetic layers
were 110 and 150 Angstrom for the XC and the LG processed films, respective
ly. (3) In the XC processed films, the fcc-[111] direction of the Ni-Fe gra
ins were highly oriented perpendicularly to the film plane and an enlargeme
nt of antiferromagnetic grains was observed. We conclude that the enhanceme
nt of exchange anisotropy is caused by the enlargement of antiferromagnetic
grains in the XC processed films. (C) 1999 American Institute of Physics.
[S0021-8979(99)74708-0].