The temperature and annealing effects on junctions with high (10-13 M Omega
mu m(2) ) and low (25-30 k Omega mu m(2) ) resistance-area products were s
tudied. Junction tunneling magnetoresistance (TMR) is almost unchanged and
above 20% up to 200 degrees C. A sharp and reversible TMR decrease is obser
ved between 200 and 220 degrees C and is due to the exchange loss in the pi
nning layer. Junction TMR increases from 22% to 26% in high resistance-area
product samples (resistance decreases a factor of 2), and from 22% to 37%
(resistance increases 30% ) in low resistance-area product samples, upon an
neal up to 200-230 degrees C. Rutherford backscattering (RBS) analysis of t
he oxygen distribution in as-deposited samples indicates oxygen asymmetry i
n the barrier. This asymmetry and asymmetry in barrier parameters, found in
as-deposited samples, disappear after anneal at 200 degrees C. Two regimes
for the TMR dependence on anneal are proposed. The first up to 200 degrees
C, where TMR increases, as barrier is homogenized and polarization near th
e top electrode increases. The second, above 200 degrees C in low-resistanc
e junctions, where TMR increase is related with barrier height increase. (C
) 1999 American Institute of Physics. [S0021-8979(99)35708-X].