The spontaneous emission factor beta is an important parameter for the char
acterization of semiconductor light emitting devices. In the analysis of su
perluminescent diodes, especially in the calculation of the optical intensi
ty using rate equations, most authors have used the estimated value of beta
taken from laser diodes, despite the conceptual difference involved in eac
h device. In this article, the spontaneous emission factor beta for superlu
minescent diodes is discussed in detail, and a new method in calculating th
e average value of beta is introduced. Based on this method, the values of
beta for gain-guided and index-guided structures are obtained. (C) 1999 Ame
rican Institute of Physics. [S0021-8979(99)05007-0].