Ion energy distributions and sheath voltages in a radio-frequency-biased, inductively coupled, high-density plasma reactor

Ion energy distributions were measured at a grounded surface in an inductiv ely coupled, high-density plasma reactor for pure argon, argon-helium, and argon-xenon discharges at 1.33 Pa (10 mTorr), as a function of radio-freque ncy (rf) bias amplitude, rf bias frequency, radial position, inductive sour ce power, and ion mass. The ground sheath voltage which accelerates the ion s was also determined using capacitive probe measurements and Langmuir prob e data. Together, the measurements provide a complete characterization of i on dynamics in the sheath, allowing ion transit time effects to be distingu ished from sheath impedance effects. Models are presented which describe bo th effects and explain why they are observed in the same range of rf bias f requency. [S0021-8979(99)03808-6].