Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation

Authors
Demos, SG Staggs, M Yan, M Radousky, HB De Yoreo, JJ
Citation
Sg. Demos et al., Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation, J APPL PHYS, 85(8), 1999, pp. 3988-3992
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
1
Pages
3988 - 3992
Database
ISI
SICI code
0021-8979(19990415)85:8<3988:IOOADC>2.0.ZU;2-7
Abstract
Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigate d using a microscopic fluorescence imaging system with 1 mu m spatial resol ution. The observed defect cluster concentration is approximately 10(4)-10( 6) per mm(3) depending on the crystal growth method and sector of the cryst al. The intensity of the emission clusters varies widely within the image f ield while a nearly uniformly distributed background is present. Spectrosco pic measurements provided information on the emission characteristics of th e observed defect population. (C) 1999 American Institute of Physics. [S002 1-8979(99)05008-2].