Systematic studies of the postgrowth annealing of molecular beam epitaxial
deposited SrS:Cu films are reported. In the as-grown SrS: Cu films, the gra
in size was small and the luminescence very weak. A step-annealing procedur
e in a H2S atmosphere was developed and found to be a very efficient way to
improve the crystallinity and luminescent properties without damage to the
low temperature glass substrate and insulator layer of the device. A model
is presented in terms of the free energy of formation and the reaction kin
etics of Cu with H2S. It was proposed that the weak luminescence in the as-
grown films was attributed to Cu atoms segregated at the grain boundaries i
n the SrS film. The oxidation of atomic Cu by H2S and the diffusion of Cuinto the SrS lattice during annealing were responsible for the grain growth
and the improved luminescent properties. (C) 1999 American Institute of Ph
ysics. [S0021-8979(99)04708-8].