K. Tanaka et al., Photocurrent spectroscopy and study of subband parameters for heavy holes in nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures, J APPL PHYS, 85(8), 1999, pp. 4071-4075
Nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum wells structures were
studied by photocurrent spectroscopy. Photocurrent spectra showed clear ste
plike structures accentuated by exciton peaks. Many interband transitions w
ere assigned from the spectral structure. As peaks of forbidden transitions
, which appeared in large reverse bias voltages, were extrapolated to zero
bias voltage on the photocurrent spectra, transition energies were estimate
d in a square potential well. New estimation methods of valence band parame
ters, heavy hole effective mass and valence band offset, were derived from
a saturation of the heavy hole subband in the valence potential well, using
the envelope function model in the effective mass approximation. The heavy
hole effective mass in a direction normal to the quantum well plane and th
e valence band offset were 0.38m(0) and 0.22 eV. (C) 1999 American Institut
e of Physics. [S0021-8979(99)00108-5].