Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure

The current-voltage (I-V) characteristics of a doped weakly coupled GaAs/Al As superlattice (SL) with narrow barriers are measured under hydrostatic pr essure from 1 bar to 13.5 kbar at both 77 and 300 K. The experimental resul ts show that, contrary to the results in SL with wide barriers, the plateau in the I-V curve at 77 K does not shrink with increasing pressure, and bec omes wider after 10.5 kbar. It is explained by the fact that the E-Gamma 1- E-Gamma 1 resonance peak is higher than the E-Gamma 1-E-X1 resonance peak. At 300 K, however, because of the more important contribution of the nonres onant component to the current, the plateau shrinks with increasing pressur e. (C) 1999 American Institute of Physics. [S0021-8979(99)02008-3].