Growth and annealing effect of high-quality ZnSe : N/ZnSe by MOCVD

The ZnSe:N epitaxial layers were grown on (1 1 0) ZnSe substrates in a low- pressure metalorganic chemical vapor deposition (MOCVD) system using hydrog en as a carrier gas, and using ammonia as a dopant source. In order to obta in highly doped ZnSe:N epitaxial layers, the optimum growth and doping cond itions were determined by studying the photoluminescence (PL) spectra from the ZnSe epitaxial layers grown at different ammonia flux and VI/II flux ra tio, Furthermore, in order to enhance the concentration of active nitrogen in ZnSe epitaxial layer, a rapid thermal anneal technique was used for post -heat-treating. The results show that the annealing temperature of over 102 3 K is necessary. Beside, a novel treatment method to obtain a smooth subst rate surface for growing high quality ZnSe epitaxial layers is also describ ed. (C) 1999 Elsevier Science B.V. All rights reserved.