Low-temperature synthesis of C-60 thin films by ionized cluster beam deposition technique

C-60 films on S(1 1 1)have been grown at low substrate temperature of 100 d egrees C by ionized cluster beam deposition technique. Fourier transform in frared (FTIR) transmission spectroscopy, Raman measurements and X-ray diffr action are employed to investigate the structure of deposited films. The re sults show that the acceleration voltage plays an important role in the gro wth of the films. As the acceleration voltage is moderate (similar to 100 V ), a pristine C-60 film with face-centered-cubic (fcc) crystal structure ca n be grown. Further increase of the acceleration voltage leads to the forma tion of amorphous carbon (a-C) in the grown films. When the acceleration vo ltage is increased to 600 V, the deposited film has a complete amorphous ca rbon (a-C) structure. (C) 1999 Published by Elsevier Science B.V. All right s reserved.