Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy

The conditions for the growth of single-crystalline wurtzite aluminum nitri de (AlN) films on Si(1 1 1) have been established by plasma-assisted molecu lar beam epitaxy. The yield of atomic nitrogen from the RF-source has been investigated by optical and by mass-spectrometry. ALN films grown under RF- source conditions with the highest yield of atomic nitrogen, as determined by mass-spectrometry, generally show narrowest AlN(0 0 0 2) rocking curve l inewidths in X-ray diffraction. By supplying nitrogen and aluminum close to unity, AlN has been grown two-dimensionally with atomically smooth surface s. Surface reconstructions have been investigated by reflection of high-ene rgy electron diffraction as a function of the substrate temperature and the Al-overpressure. High-resolution transmission electron micrographs taken a t the heterointerface show a coincidence between both materials with a rati o of 5 .d d(AlN((2) over bar 110)) to 4 . d(Si((1) over bar 10)). The misfi t is accomodated within the very first monolayers on either side. (C) 1999 Elsevier Science B.V. All rights reserved.