Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD

Nano-scale InGaN/GaN multi-structures have been grown on amorphous Si subst rates using metal-organic chemical vapor deposition (MOCVD). The density, l ateral size and height of the grown nano-scale InGaN/GaN multi-structures w ere estimated to be 10(10) cm(-2), 120 nm and 50 nm, respectively, by atomi c-force microscopy (AFM), The optical properties of these nano-structures h ave been studied by photoluminescence (PL) and Raman scattering. Compared t o the band gap emission from a reference InGaN/GaN multi-quantum wells samp le, an evident blue-shift of the emission peak from the InGaN/GaN nano-stru ctures could be observed from PL spectra obtained at 20 K. This result sugg ests that the carriers in the InGaN/GaN nano-structures are three-dimension ally confined. (C) 1999 Elsevier Science B.V. All rights reserved.