Effect of chemical preparation of Si(1 1 1) surfaces on the CaF2 growth

Authors
Breton, G Nouaoura, M Gratens, X Laire, O Touhari, F Charar, S Averous, M
Citation
G. Breton et al., Effect of chemical preparation of Si(1 1 1) surfaces on the CaF2 growth, J CRYST GR, 200(1-2), 1999, pp. 112-117
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
200
Issue
1-2
Year of publication
1999
Pages
112 - 117
Database
ISI
SICI code
0022-0248(199904)200:1-2<112:EOCPOS>2.0.ZU;2-H
Abstract
The effects of silicon chemical preparation on CaF2/Si(1 1 1) heteroepitaxy elaborated by MBE are investigated A comparative study of Si(1 1 1) surfac es between a Shiraki modified procedure and a HF treatment by RHEED, AES an d AFM is realised. The best results obtained by the HF treatment show: a co ntamination free thermal cleaning at low temperature in ultra-high vacuum ( 600-650 degrees C) and good morphological quality (RMS = 1.4 Angstrom) of S i surfaces; a uniform CaF2 layer on Si substrate. (C) 1999 Elsevier Science B.V. All rights reserved.