Active control of interface shape during the crystal growth of lead bromide

Citation
Rg. Seidensticker et al., Active control of interface shape during the crystal growth of lead bromide, J CRYST GR, 199, 1999, pp. 988-994
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
2
Pages
988 - 994
Database
ISI
SICI code
0022-0248(199903)199:<988:ACOISD>2.0.ZU;2-M
Abstract
A thermal model for predicting and designing the furnace temperature profil e was developed and used for the crystal growth of lead bromide. The model gives the ampoule temperature as a function of the furnace temperature, the rmal conductivity, heat transfer coefficients, and dimensions as variable p arameters. Crystal interface curvature was derived from the model and it wa s compared with the predicted curvature for a particular furnace temperatur e and growth parameters. Large crystals of lead bromide were grown and it w as observed that interface shape was in agreement with the shape predicted by this model. (C) 1999 Published by Elsevier Science B.V. All rights reser ved.