A novel reactor concept for multiwafer growth of III-V semiconductors

Since the invention of the Planetary Reactors(R) a reliable tool for mass p roduction of various III-V compounds has existed. These reactors have prove n to grow extremely uniform films together with a highly efficient utilizat ion of the precursors. Now a new generation of Planetary Reactors(R) is int roduced: the so-called G3 systems. Their main features are: an inductive he ating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size (15 x 2", 35 x 2" to 9 x 4" wafers per load so far, further enlargement possible) and the option to use a fully a utomated cassette-to-cassette wafer loading system. The benefits of this ne w design are very short cycle times, extreme run-to-run stability and even further reduced cost of ownership. The performance of this reactor will be discussed in conjunction with the well established AIX 2400 reactor with a set up of 15 x 2" or 5 x 4" wafer. Uniformity of thickness, luminescence in tensity and composition of the most important III-V compounds such as GaInP , GaInAsP and AlGaInP are shown. (C) 1999 Elsevier Science B.V. All rights reserved.