Citation
D. Mogilyanski et al., Structural characterization of LPOMVPE grown AlAs/GaAs multilayers, J CRYST GR, 199, 1999, pp. 1070-1076
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
199
Year of publication
1999
Part
2
Pages
1070 - 1076
Database
ISI
SICI code
0022-0248(199903)199:<1070:SCOLGA>2.0.ZU;2-A
Abstract
The characterization of the AlAs\GaAs multilayers based on the modelling of
the X-ray scattering is discussed. The structural parameters regarding the
thickness of the bilayer components and the vertical and lateral variation
s (interface roughness) were assessed from low and high angle scan modes. T
he diffuse scattering analysis showed that both lateral and vertical correl
ation of the interface roughness develops in this LPOMVPE grown system. (C)
1999 Elsevier Science B.V. All rights reserved.