Rapid thermal processing of epitaxial II-VI heterostructures

The rapid thermal processing combined with metalorganic chemical vapor depo sition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that a ll steps of rapid thermal processing contribute to the growth of II-VI comp ounds: (i) Photothermal pretreatment of substrate surfaces improves the cry stalline structure and morphology of the films. (ii) RTP-MOCVD process resu lts in higher growth rates (up to 60 mu m/h) compared to conventional MOCVD . (iii) Rapid thermal annealing (RTA) leads to further improvement of the e pilayers crystalline structure. (C) 1999 Elsevier Science B.V. All rights r eserved.