Effects of photoirradiation energy and of underlying layers on ZnSe growthby photoassisted MOVPE

The role of underlying layer on ZnSe growth by photoassisted metalorganic v apor phase epitaxy was investigated. The growth rate of ZnSe is found to be strongly influenced by the combination of photoirradiation energy, growth temperature and buffer layer material. It is shown that between 300 degrees C and 350 degrees C the growth of ZnSe occurs on ZnSe, but not on ZnS, if the photoirradiation energy is between the bandgaps of ZnS and ZnSe, which suggests novel selective area growth is possible without a mask. A growth m odel of ZnSe is discussed in terms of the underlying layers. (C) 1999 Elsev ier Science B.V. All rights reserved.