MOCVD growth of ordered Cd(1-x)ZnxTe epilayers

This work reports for the first time the preparation of ordered Cd(1-x)ZnxT e epilayers. The epilayers were deposited on CdTe (100) substrates by metal organic chemical vapor deposition in a horizontal quartz reactor. Diethylz inc, dimethylcadmuim and diethyltelluride were used as metalorganic precurs ors with hydrogen as a carrier gas. Influence of different growth parameter s on the growth process is studied for the deposited Cd(1-x)ZnxTe layers. T ransmission electron microscopy diffraction was performed and the long-rang e ordering effect was observed for the first time, in these layers. The app earance of extra spots attributed to (h +/- 1/2, k +/- 1/2, l +/- 1/2) plan es is the indication of CuPt-type atomic ordering in the CdZaTe epilayers. (C) 1999 Elsevier Science B.V. All rights reserved. PACS: 81.05.Dz; 81.15.K k; 61.10.Eq; 61.14. -x.