Highly conductive and transparent thin ZnO films prepared in situ in a lowpressure system

Authors
Ataev, BM Bagamadova, AM Mamedov, VV Omaev, AK Rabadanov, MR
Citation
Bm. Ataev et al., Highly conductive and transparent thin ZnO films prepared in situ in a lowpressure system, J CRYST GR, 199, 1999, pp. 1222-1225
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
2
Pages
1222 - 1225
Database
ISI
SICI code
0022-0248(199903)199:<1222:HCATTZ>2.0.ZU;2-8
Abstract
Successful preparation of ZnO : M epitaxial thin films (ETF) in situ doped with donor impurity M = Ga, Sn by chemical vapor despsition in a low-pressu re system is reported. Highly conductive (up to 10(-4) Omega cm) and transparent (T > 85%) ZnO : M ETF have been successfully produced on single crystal (1012) sapphire subs trates. Electrical properties of the films as well as their excition lumine scence were studied. (C) 1999 Elsevier Science B.V. All rights reserved.