Two-dimensional analysis of axial segregation in batchwise and continuous Czochralski process

Transient two-dimensional convection-diffusion model has been developed to simulate the segregation phenomena in batchwise and continuous Czochralski process. Numerical simulations have been performed using the finite element method and implicit Euler time integration. The mesh deformation due to th e change of the melt depth in batchwise Czochralski process was considered. Experimental values of the growth and system, parameters for Czochralski g rowth of boron-doped, 4-in silicon single crystal were used in the numerica l calculations. The experimental axial segregation in batchwise Czochralski process can be described successfully using convection-diffusion model. It has been demonstrated with this model that silicon single crystal with uni form axial dopant concentration can be grown and radial segregation can be suppressed in the continuous Czochralski process. (C) 1999 Published by Els evier Science B.V. All rights reserved.