Morphological change of semiconductor growth interface from solution in a magnetic field

In the present study, the morphological changes of a semiconductor growth i nterface from a solution were observed by near-infrared microscopy in rotat ing and static magnetic fields generated by two kinds of electromagnetic se tups. The rotating magnetic setup had a maximum magnetic induction of 12 mT with a frequency of 50 Hz at the center of the furnace, The static magneti c field was produced by a single solenoid with a maximum magnetic induction of 800 mT. The growth of GaP/GaP (1 1 1) B was performed by a linear cooli ng method at the rate of 1 K/min under a starting growth temperature of 117 3 K. The results revealed few differences in the morphological changes duri ng growth under constant rotating magnetic fields of 0 and 12 mT. It was sh own that the transverse static magnetic field of 800 mT reduced the growth rate and suppressed the appearance of macrosteps on the facet region. (C) 1 999 Elsevier Science B.V. All rights reserved.