Temperature distribution near the interface in sapphire crystals grown by EFG and GES methods

Authors
Krymov, VM Kurlov, VN Antonov, PI Theodore, F Delepine, J
Citation
Vm. Krymov et al., Temperature distribution near the interface in sapphire crystals grown by EFG and GES methods, J CRYST GR, 199, 1999, pp. 210-214
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
1
Pages
210 - 214
Database
ISI
SICI code
0022-0248(199903)199:<210:TDNTII>2.0.ZU;2-#
Abstract
This paper presents results of experiments on in situ temperature measureme nts during sapphire shaped crystal growth. The temperature distribution dif ference between the crystals grown by EFG (edge-defined, film-fed growth) a nd GES (growth from an element of shape) methods is considered. (C) 1999 El sevier Science B.V. All rights reserved.