The strengths of sapphire crystals grown both by Stepanov/EFG and GES (grow
th from an element of shape) methods were compared. Tests were carried out
in four-point loading between ambient and 1500 degrees C. Crystals of vario
us shape and of different orientations were investigated. (C) 1999 Publishe
d by Elsevier Science B.V. All rights reserved.