Modelling plastic stress relaxation in shaped sapphire crystal growth

Citation
F. Theodore et al., Modelling plastic stress relaxation in shaped sapphire crystal growth, J CRYST GR, 199, 1999, pp. 232-238
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
1
Pages
232 - 238
Database
ISI
SICI code
0022-0248(199903)199:<232:MPSRIS>2.0.ZU;2-7
Abstract
Thermally induced stresses in growing shaped sapphire crystals are modelled using transient finite element simulations. Boundary conditions and mass c hanges are: fixed on an expanding remeshed and updated grid. The actual str esses are obtained taking into account plastic relaxation through dislocati on glide along basal, prismatic and pyramidal slip planes. For this purpose , phenomenological creep laws available for this material are implemented i n the frame of thermally activated plasticity. The model is calibrated by c omparison with directional mechanical tests, and validation is performed by growth simulations and dislocation density measurements on as-grown crysta ls. (C) 1999 Elsevier Science B.V. All rights reserved.