Growth rates of gibbsite single crystals determined using in situ optical microscopy

Citation
My. Lee et Gm. Parkinson, Growth rates of gibbsite single crystals determined using in situ optical microscopy, J CRYST GR, 199, 1999, pp. 270-274
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
1
Pages
270 - 274
Database
ISI
SICI code
0022-0248(199903)199:<270:GROGSC>2.0.ZU;2-Z
Abstract
Although the crystallization of gibbsite via the Bayer process is an establ ished industry, the mechanism by which gibbsite crystallizes is not well un derstood. In the microscopic investigation of gibbsite crystal growth, the phenomenon of growth rate dispersion was observed. The study of the growth rate dependence on supersaturation showed that growth of the prismatic face s is occurring via a spiral growth mechanism. In the case of the basal face , above a relative supersaturation of 0.67, birth and spread is the princip al mechanism operating, while spiral growth is the major mechanism operatin g below a relative supersaturation of 0.67. (C) 1999 Elsevier Science B.V. All rights reserved.