6" SI GaAs single crystals are grown by the standard LEG-process in a new-g
eneration multi-heater puller designed for charges up to 50 kg and crucible
s up to 12", applying the carbon controlled growth technology. It is demons
trated that the increasing requirements of device manufacturers with regard
to macroscopic and mesoscopic homogeneity of electrical properties, mechan
ical strength, flatness and cleanliness of the wafers can be fully met by L
EC grown 6" crystals. (C) 1999 Elsevier Science B.V. All rights reserved.