State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals

Authors
Flade, T Jurisch, M Kleinwechter, A Kohler, A Kretzer, U Prause, J Reinhold, T Weinert, B
Citation
T. Flade et al., State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals, J CRYST GR, 199, 1999, pp. 336-342
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
1
Pages
336 - 342
Database
ISI
SICI code
0022-0248(199903)199:<336:SOTA6'>2.0.ZU;2-Y
Abstract
6" SI GaAs single crystals are grown by the standard LEG-process in a new-g eneration multi-heater puller designed for charges up to 50 kg and crucible s up to 12", applying the carbon controlled growth technology. It is demons trated that the increasing requirements of device manufacturers with regard to macroscopic and mesoscopic homogeneity of electrical properties, mechan ical strength, flatness and cleanliness of the wafers can be fully met by L EC grown 6" crystals. (C) 1999 Elsevier Science B.V. All rights reserved.