Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach

Authors
Korb, J Flade, T Jurisch, M Kohler, A Reinhold, T Weinert, B
Citation
J. Korb et al., Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach, J CRYST GR, 199, 1999, pp. 343-348
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
1
Pages
343 - 348
Database
ISI
SICI code
0022-0248(199903)199:<343:COBHAN>2.0.ZU;2-B
Abstract
The ChemSage code [Eriksson and Hack, Metall. Trans. B 12 (1990) 1013] to m inimize the total Gibbs free energy was used to calculate phase equilibria in the complex thermochemical system representing LEC GaAs crystal growth w hich comprises the growth atmosphere, the liquid boron oxide, the GaAs melt and solid phases including the GaAs crystal. The behaviour of C, B, O, N a nd H in the crystal growth melt at 1509.42 K is investigated in dependence on relevant technological parameters. (C) 1999 Elsevier Science B.V. All ri ghts reserved.