J. Korb et al., Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach, J CRYST GR, 199, 1999, pp. 343-348
The ChemSage code [Eriksson and Hack, Metall. Trans. B 12 (1990) 1013] to m
inimize the total Gibbs free energy was used to calculate phase equilibria
in the complex thermochemical system representing LEC GaAs crystal growth w
hich comprises the growth atmosphere, the liquid boron oxide, the GaAs melt
and solid phases including the GaAs crystal. The behaviour of C, B, O, N a
nd H in the crystal growth melt at 1509.42 K is investigated in dependence
on relevant technological parameters. (C) 1999 Elsevier Science B.V. All ri
ghts reserved.