Oxygen incorporation in undoped LEC-GaAs

Citation
G. Gartner et al., Oxygen incorporation in undoped LEC-GaAs, J CRYST GR, 199, 1999, pp. 355-360
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
199
Year of publication
1999
Part
1
Pages
355 - 360
Database
ISI
SICI code
0022-0248(199903)199:<355:OIIUL>2.0.ZU;2-0
Abstract
Local vibration mode (LVM) spectroscopy has been used to study the incorpor ation of oxygen in undoped LEC GaAs with enhanced oxygen content grown unde r N-2-overpressure. In addition to local modes belonging to isolated oxygen , various LVM lines were observed in the frequency range of 1200-1500 cm(-1 ). These lines have characteristic peaks at 1244, 1325 and 1270 cm(-1). The peaks are related to three different types of boron complexes which probab ly contain oxygen or nitrogen. An additional LVM line at 638 cm(-1) has bee n observed, which may be related to nitrogen. (C) 1999 Elsevier Science B.V . All rights reserved.