Melt growth of quasi-binary (GaSb)(1-x)(InAs)(x) crystals

A new class of III-V quasi-binary [A(III)B(v)](1-x)[CIIIDV](x) semiconducto r alloys has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on (GaSb)(1-x)(lnAs)(x) ( 0 < x < 0.05) due to its importance for thermophotovoltaic applications. Th e structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga1-xI nxAsySb1-y with composition x = y. Synthesis and growth procedures are disc ussed. (C) 1999 Elsevier Science B.V. All rights reserved.