Modified GaSe crystals for mid-IR applications

We have synthesized stoichiometric batches of GaSe by reacting mixtures of the parent components and have grown centimeter-size modified single crysta ls of GaSe by the vertical Bridgman technique. GaSe crystals doped with sil ver, indium and silver gallium selenide were fabricated for wavelength conv ersion. Silver doping produced scattering centers which could be dissolved by annealing at temperatures above 700 degrees C. Crystals cracked extensiv ely during the annealing process and optical quality deteriorated. SHG meas urements of In-doped crystals showed a "d" value of 49 pm/V for low concent ration In-doped GaSe crystals. The silver gallium selenide doped GaSe cryst als showed a "d" value of 75 pm/V which resulted in significant increase in the "d(2)/n(3)". (C) 1999 Published by Elsevier Science B.V. All rights re served.