The electronic structure and decay dynamics of a long-lived excited state i
n CdS quantum dots (Q-CdS) were investigated in a novel way by a time-resol
ved optoelectrical method. Q-CdS was adsorbed as a monolayer on a gold elec
trode and used in a photoelectrochemical cell, the gold/Q-CdS/electrolyte s
tructure forming a double-barrier tunnel junction. The rates of photoinduce
d tunneling processes were measured by intensity-modulated photocurrent spe
ctroscopy (IMPS). These tunneling processes compete with intraparticle deca
y of a long-lived excited state. In this way the excited-state dynamics cou
ld be studied. From a scan of the gold Fermi level, it was deduced that the
long-lived excited state consists of an electron in the LUMO and a hole tr
apped in a level high in the bandgap.