A model of plasma-based ion implantation around a round hole in a flat plate

Authors
Citation
Te. Sheridan, A model of plasma-based ion implantation around a round hole in a flat plate, J PHYS D, 32(8), 1999, pp. 886-890
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
32
Issue
8
Year of publication
1999
Pages
886 - 890
Database
ISI
SICI code
0022-3727(19990421)32:8<886:AMOPII>2.0.ZU;2-D
Abstract
We use a two-dimensional hybrid simulation (particle ions and Boltzmann ele ctrons) to study sheath and ion dynamics around a small round hole in a fla t, conducting plate following the application of a large, negative voltage pulse, such as might be encountered during plasma-based ion implantation. R esults for hole radii of an eighth and half the ion-matrix overlap length a nd for depths of one, two and four times the radius are reported. For all t hese cases, it is found that the hole represents a small perturbation to a planar sheath since the sheath width is always greater than the hole radius . Consequently, most of the ions that enter the hole impact on its bottom a t near normal angles; only a small fraction impact on the sidewall obliquel y.