Photocurrent and differential capacity measurements at polybithienyl and poly(3-butylthiophene) films

Authors
Zhang, WF Schmidt-Zhang, P Kossmehl, G Plieth, W
Citation
Wf. Zhang et al., Photocurrent and differential capacity measurements at polybithienyl and poly(3-butylthiophene) films, J SOL ST EL, 3(3), 1999, pp. 135-140
Citations number
30
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF SOLID STATE ELECTROCHEMISTRY
ISSN journal
14328488 → ACNP
Volume
3
Issue
3
Year of publication
1999
Pages
135 - 140
Database
ISI
SICI code
1432-8488(199904)3:3<135:PADCMA>2.0.ZU;2-R
Abstract
Photocurrent and differential capacity measurements have been carried out a t polybithienyl (PBT) and poly(3-butylthiophene) (PBuT) films on platinum. The photocurrents are cathodic, similar to inorganic p-type semiconductors. The band gap energy was determined from the photocurrent spectra (E-g = 1. 7 eV for PET and E-g = 1.9 eV for PBuT). The dependence of the differential capacity on the potential could be presented as Mott-Schottky plot, at lea st in a limited potential region. The flatband potential was determined (E- fb = 0.67 V for PET and E-fb = 0.58 V for PBuT).