Photoluminescence as an in situ probe for copper electrodeposition on p-GaAs

Photoluminescence (PL) was used as an in situ method for studying the elect rodeposition of copper on p-GaAs. During electrodeposition, PL of GaAs deca yed due to growth of the metallic layer and the PL signal was sensitive to a fraction of a monolayer of copper. Recovery of the initial PL intensity w as observed after anodic stripping of the copper deposit. A quantitative em pirical relationship was established between the PL decrease and the amount of deposited copper, Variation in PL intensity is mainly due to modificati on of the optical properties of the interface rather than to a change in se miconductor band bending. PL can be a convenient method for monitoring meta l electrodeposition on other semiconductors too. (C) 1999 The Electrochemic al Society. S0013-4651(98)06-037-6. All rights reserved.