A thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses

A thermal model for the initiation of programming in metal-to-metal amorpho us-silicon antifuses is described, The current and field crowding at the ed ges of the via cause the temperature at the via corners to increase due to Joule heating. Programming is initiated when the temperature at the via edg es reaches the melting temperature of amorphous silicon. The model presente d in this work explains how the thickness of the amorphous-silicon layer, t he ambient temperature. and the duration of the programming pulse affect th e programming process. (C) 1999 The Electrochemical Society. S0013-4651(98) 06-089-3. All rights reserved.