Instability of amorphous Ru-Si-O thin films under thermal oxidation

Authors
Gasser, SM Ruiz, R Kolawa, E Nicolet, MA
Citation
Sm. Gasser et al., Instability of amorphous Ru-Si-O thin films under thermal oxidation, J ELCHEM SO, 146(4), 1999, pp. 1546-1548
Citations number
44
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
146
Issue
4
Year of publication
1999
Pages
1546 - 1548
Database
ISI
SICI code
0013-4651(199904)146:4<1546:IOARTF>2.0.ZU;2-U
Abstract
Ternary films about 200 nm thick of composition Ru20Si15O65 have been synth esized by reactive rf magnetron sputtering of a Ru,Sit target in an argon-o xygen gas. As-deposited, the films are X-ray-amorphous. Their atomic densit y is 8.9 X 10(22)/cm(3) (5.1 g/cm(3)), and their electrical resistivity is in the range of 2 m Ohm cm. After annealing in dry oxygen at 600 degrees C for 30 min, micron-sized grains of RuO2 grow out of the film and volatile R uO4 escapes. The significant of these results is discussed. (C) 1999 The El ectrochemical Society. S0013-4651(98)07-010-4. All rights reserved.