Thermal donor and oxygen precipitate formation in silicon during 450 degrees C treatments under atmospheric and enhanced pressure

Early stages of thermal donor and oxygen cluster creation in Czochralski-gr own silicon annealed at 450 degrees C were investigated. Enhanced (up to 1. 2 GPa) argon pressure during anneals was applied to exert additional effect on the generation of oxygen-related clusters in silicon. Oxygen atoms part icipate in the formation at 450 degrees C of local oxygen agglomerates and thermal donors in the case of anneal under atmospheric pressure. High-press ure treatments enhance the rate of thermal donor generation and suppress ox ygen accumulation in the agglomerates. Employment of the 450 degrees C anne al as a first step in the two-stages process (at 450-1033 degrees C) of oxy gen cluster formation at high pressure leads to creation of clusters of oxy gen precipitates and to more effective removal of interstitial oxygen atoms from the silicon matrix. (C) 1999 The Electrochemical Society. S0013-4651( 98)04-008-7. All rights reserved.