FULL SPACE-TIME SIMULATION FOR HIGH-BRIGHTNESS SEMICONDUCTOR-LASERS

A semiconductor laser model is presented, which resolves the full time , longitudinal and lateral space dependences, The model is applied to an investigation of the dynamical stability of an integrated master-os cillator power-amplifier (MOPA) device. The model captures the full ga in and refractive index bandwidth as a function of total carrier densi ty, Our simulation confirms, for the first time, some recent experimen tal observations of high frequency whole beam oscillations and experim ental reports that complex transverse filamentation occurs at high pow er amplifier currents.