Exciton-polariton reflectance in CuI single crystals

Citation
M. Certier et al., Exciton-polariton reflectance in CuI single crystals, MAT SCI E B, 58(3), 1999, pp. 234-237
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
3
Year of publication
1999
Pages
234 - 237
Database
ISI
SICI code
0921-5107(19990329)58:3<234:ERICSC>2.0.ZU;2-O
Abstract
We have measured the normal reflection spectrum of (1 (1) over bar 0) cleav ed faces of single crystals of CuI in the spectral range of the Z(12)(3058 meV) and Z(3)(3699 meV) exciton lines at the temperature of 95 K. We have f itted the experimental data by computing a non local dielectric function an d taken into account various additional boundary conditions (ABC) as well a s the dead layer model in a semi-infinite crystal. A quantitative agreement is obtained assuming the following values for the background dielectric co nstant epsilon(infinity) = 7.2 and for the effective masses of the excitons M(Z(12)) = 1.8 m(0), M(Z(3)) = 0.5 m(0). These results do not depend on th e choice of a particular ABC. The longitudinal-transverse exciton splitting energies deduced from the fit are: omega(LT) (Z(12)) = 5.9 meV and omega(L T) (Z(3)) = 2 meV. (C) 1999 Elsevier Science S.A. All rights reserved.