The influence of Cu doping on opto-electronic properties of chemically deposited CdS

Authors
Petre, D Pintilie, I Pentia, E Pintilie, I Botila, T
Citation
D. Petre et al., The influence of Cu doping on opto-electronic properties of chemically deposited CdS, MAT SCI E B, 58(3), 1999, pp. 238-243
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
58
Issue
3
Year of publication
1999
Pages
238 - 243
Database
ISI
SICI code
0921-5107(19990329)58:3<238:TIOCDO>2.0.ZU;2-5
Abstract
Cadmium sulphide (CdS) thin films were deposited on glass substrate by prec ipitation from aqueous solution technique. The films were doped with copper using the direct method consisting in the addition of a copper salt (CuCl2 ) in the deposition bath of CdS. The doped films were annealed in air, at 3 00 degrees C, for 1 h. We report some structural, optical, electrical and p hotoelectrical properties of CdS thin films before and after Cu doping, cor related with investigation of trapping levels by Thermally Stimulated Curre nts (TSC) method. (C) 1999 Elsevier Science S.A. All rights reserved.