Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces

Authors
Sanguinetti, S Miotto, A Castiglioni, S Grilli, E Guzzi, M Henini, M Polimeni, A Patane, A Eaves, L Main, PC
Citation
S. Sanguinetti et al., Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces, MICROELEC J, 30(4-5), 1999, pp. 419-425
Citations number
25
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
30
Issue
4-5
Year of publication
1999
Pages
419 - 425
Database
ISI
SICI code
0026-2692(199904/05)30:4-5<419:OAMPOI>2.0.ZU;2-R
Abstract
Optical and morphological properties of self assembled In(Ga)As/GaAs quantu m dot systems, grown on high index (N11) substrates, for a wide range of or ientations, coverages and compositions, are presented and reviewed. The use of high Miller index substrate orientations permits to intervene on major quantum dots properties such as shape, size distribution, transition energy and emission polarisation, thus opening a wide range of device design oppo rtunities. (C) 1999 Elsevier Science Ltd. All rights reserved.