Novel package improves MOSFET reliability

Citation
B. Hanson et C. Leuthauser, Novel package improves MOSFET reliability, MICROWAV RF, 38(4), 1999, pp. 131
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVES & RF
ISSN journal
07452993 → ACNP
Volume
38
Issue
4
Year of publication
1999
Database
ISI
SICI code
0745-2993(199904)38:4<131:NPIMR>2.0.ZU;2-9
Abstract
TEMPERATURE is a determining factor in the performance of solid-state devic es and circuits. Temperature influences device operating state characterist ics and performance, and is a crucial variable when estimating electronic d evices' lifetime. Most failure mechanisms of semiconductor devices are acce lerated at higher operating temperatures, and an antiquated rule of thumb s uggests that for every 10 degrees C rise in temperature, the failure rate d oubles. Also, limiting device temperatures can be the key to meet performan ce criteria. Higher operating temperatures usually degrade device performan ce, for example, by reducing gain, efficiency, and increasing leakage curre nts.