Influence of material growth and annealing conditions on recombination processes in low-temperature-grown GaAs

Authors
Loka, HS Benjamin, SD Smith, PWE
Citation
Hs. Loka et al., Influence of material growth and annealing conditions on recombination processes in low-temperature-grown GaAs, OPT COMMUN, 161(4-6), 1999, pp. 232-235
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS COMMUNICATIONS
ISSN journal
00304018 → ACNP
Volume
161
Issue
4-6
Year of publication
1999
Pages
232 - 235
Database
ISI
SICI code
0030-4018(19990315)161:4-6<232:IOMGAA>2.0.ZU;2-Q
Abstract
In this paper we report direct measurements of the recombination times in l ow-temperature-grown GaAs (LT-GaAs). We investigate the effect of growth an d annealing conditions on the recombination dynamics involving mid-gap and localized states. (C) 1999 Published by Elsevier Science B.V. All rights re served.