Optical gain and excitonic processes in widegap semiconductor quantum wells

Authors
Citation
Av. Nurmikko, Optical gain and excitonic processes in widegap semiconductor quantum wells, PHASE TRAN, 68(1), 1999, pp. 95-149
Citations number
74
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHASE TRANSITIONS
ISSN journal
01411594 → ACNP
Volume
68
Issue
1
Year of publication
1999
Part
B
Pages
95 - 149
Database
ISI
SICI code
0141-1594(1999)68:1<95:OGAEPI>2.0.ZU;2-T
Abstract
The dominant role of the strong electron-hole Coulomb correlations in wideg ap II-VI semiconductor quantum well heterostructures is illustrated by sele ctively highlighting key phenomena studied in experiments encompassing ZnSe -based QWs. These include gain and stimulated emission at low temperatures from excitonic molecules, excitonic enhancements to gain in room temperatur e green-blue diode lasers, and light-matter interaction in vertical microca vity lasers.